Surface Potential Mappings on TMD P-N Junctions
P-N junctions are the basis of most modern electronicsthe foundation for the diodes and transistors that make up our computers. Current research in low dimensional transition metal dichalcogenide (TMD) heterostructures aims to make these junctions smaller. TMD p-n junctions are made of atomically thin, stacked TMD layers and have been hailed for their novel properties, diverse applications, and potential to revolutionize electronics. My research project will provide improved understanding of the performance, functionality, and limits of atomically thin, stacked TMD p-n junctions. I will use Kelvin probe force microscopy (KPFM)a powerful variant of frequency modulated atomic force microscopyto map the surface potential of a nanoscale p-n junction, which will help determine the electronic properties of the junction.
Message to Sponsor
- Major: Physics
- Sponsor: Leadership
- Mentor: Michael Crommie, Physics