Using Disorder to Control Topology in MnBi2Te4
Topological insulators, electronic materials that behave like insulators in their interior but can conduct current on their edges or surfaces, hold a lot of potential for improving the function and energy efficiency of various devices. These materials have unique electrical properties resulting from their conducting edge and surface states. Specifically, these states can transport charge with very low resistivity, leading to efficient conduction. Topological insulator materials are heavily influenced by the symmetry of their crystal structure─the pattern in which their atoms are arranged. For this reason, my project will investigate the effects of structural disorder─which breaks spatial symmetries─on the properties of a relatively new topological insulator with the chemical formula MnBi2Te4 (Manganese, Bismuth, and Tellurium) through computational quantum mechanical modeling methods such as Density Functional Theory. Namely, I will look at the effect of slightly distorting the crystal structure on the magnetism, electronic structure, and other properties of the material.
Message to Sponsor
- Major: Chemistry
- Sponsor: Rose Hill Foundation
- Mentor: Sinéad Griffin